In order to open up new ways beyond silicon-based electronic devices, the research of new devices based on quantum materials has become a frontier hotspot. As an important branch of quantum materials, the thickness of two-dimensional quantum materials is only atomic level and the quantum effect is significant. The preparation of large-area and high-quality two-dimensional single crystals is the key to achieving large-scale application of two-dimensional devices. The development of symmetry has brought great challenges to the growth of two-dimensional single crystals. Under the key special fund of quantum control and quantum information, the research group and collaborators of Peking University Liu Kaihui designed a single crystal face Cu (110) / <211> with non-central inversion symmetry with special step direction The energy difference of the coupling strength between the step edge and the boron and nitrogen zigzag boundaries in the hexagonal boron nitride crystal domain breaks the symmetry of the orientation of the crystal domain on the substrate surface, thereby achieving the controlled growth of the single orientation of the hexagonal boron nitride crystal domain, And seamlessly spliced ​​into decimeter-level single crystal film. The study also combined in-situ growth technology and theoretical calculations to conduct an in-depth kinetic study of the growth process, and proposed a new growth mechanism. This research work provides a universal method for preparing two-dimensional single crystals, which lays the foundation for the large-scale application of two-dimensional devices.
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Using symmetry to break the substrate epitaxial two-dimensional hexagonal boron nitride single crystal (Nature 570, 91 (2019))