Recently, Zhao Jianhua, a researcher at the Semiconductor Superlattice State Key Laboratory of the Chinese Academy of Sciences Institute of Semiconductors, and his collaborators published in Nano Letters the preparation of high-quality GaAs1-xSbx nanowires with near-total component tunability. Achievements. As an important ternary alloy semiconductor, GaAs1-xSbx has a wide range of bandgap tuning from 1.42 eV (GaAs) to 0.72 eV (GaSb). The corresponding wavelength tuning range is 870 to 1720 nm, which is a potential With engineering materials, it has important application prospects in optical fiber communication systems, infrared light emitting diodes, photodetectors, lasers and heterojunction bipolar transistors. However, due to the large lattice mismatch between GaAs1-xSbx and III-V semiconductor substrates with high Sb composition, the preparation of high quality Sb-component GaAs1-xSbx thin films still poses great challenges. However, the preparation of GaAs1-xSbx into nanowires is expected to improve the quality of GaAs1-xSbx materials. At present, GaAs1-xSbx nanowires have been fabricated on Si substrates using metalorganic vapor deposition and molecular beam epitaxy, but almost all of these The Sb component in the nanowires is below 0.5. The controllable preparation of large-component, tunable, high-quality GaAs1-xSbx nanowires is a problem that plagues people. Li Jianxia, ​​PhD student of Zhao Jianhua team and assistant researcher Pan Dong, etc. used molecular beam epitaxy to regulate the flow of Sb and As-source furnaces and the vapor pressure of As in the growth chamber. It was the first to be prepared on Si substrates and GaAs nanowires in the world. Nearly all-component tunable GaAs1-xSbx nanowires. Transmission electron microscopy results show that the GaAs1-xSbx nanowires have a pure sphalerite single crystal structure. They collaborated with researchers of the Institute of Semiconductors, Sun Baoquan, Tan Pingheng, and Professor Pan Anlian of Hunan University to study the optical properties of GaAs1-xSbx nanowires and confirmed that their photoluminescence wavelength can be adjusted from 844 nm (GaAs) to 77 K. At 1760 nm (GaAs0.07Sb0.93), the tuning range of the band gap was 0.76 eV, and the red shift of the optical phonon with increasing Sb component was observed in room temperature Raman spectra. Field effect devices fabricated using GaAs1-xSbx nanowires have a significant rectification effect at low Sb compositions, and the rectification effect disappears as the Sb composition increases. The successful preparation of near-component tunable high-quality GaAs1-xSbx nanowires is expected to accelerate the application of GaAs1-xSbx ternary alloy nanowire energy band engineering in next-generation near-infrared light-emitting diodes, lasers, and fiber optic communications. This work has received financial support from the Ministry of Science and Technology, the National Natural Science Foundation of China, and the Chinese Academy of Sciences. Bathroom Vanity,Bathroom Vanity Units,Bathroom Vanities With Tops,Double Sink Vanity Ningbo Oulin Import&Export Co.,Ltd. , https://www.oulinfurniture.com